热载流子退化的自热效应及其对环振可靠性的影响

2018 International Integrated Reliability Workshop (IIRW) Pub Date : 2018-10-01 DOI:10.1109/IIRW.2018.8727093

P. Paliwoda, Z. Chbili, A. Kerber, T. Nigam, D. Singh, K. Nagahiro, P. P. Manik, S. Cimino, D. Misra

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引用次数: 2

摘要

本文讨论了自热对环形振荡器(RO)可靠性的影响及其与热载子(HC)退化的关系。我们表明，由于SH引起的HC退化调制仅在高加速条件下对逻辑pfet有意义。我们表明，在中等加速度下，这些SH对HC的影响大大减少。通过在极端条件下对活性氧施加压力，我们发现SH对HC的影响并不影响活性氧的降解。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Self-Heating Effects on Hot Carrier Degradation and its Impact on Ring-Oscillator Reliability

This paper discusses the impact of self-heating (SH) on ring-oscillator (RO) reliability and its correlation to hot carrier (HC) degradation. We show that HC degradation modulation due to SH is only significant for logic PFETs at highly accelerated conditions. We show that these SH effects on HC are greatly reduced at moderate acceleration. By stressing the ROs at extreme conditions, we show that the SH impact on HC does not affect RO degradation.

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来源期刊

2018 International Integrated Reliability Workshop (IIRW)

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