两个CMOS 0.5µm 32b数字宏

Chih-Liang Chen, Li-Kong Wang, A. Edenfeld, P. Nixon
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引用次数: 0

摘要

将报告一个P.41R的5端口通用寄存器文件(GPK)和一个算术逻辑单元ALU。基于0。采用5 ~栅极CMOS技术,测得GPR中的存取时间为6.5ns, ALU中的ADD速度为8.0ns。Sub的性能反映了在50 " l-Iz以上运行CMOS FET系统的可行性。宏电路采用结构化的位单元方法进行定制设计。在给定的位宽范围内,对GPR、ALU和LSSD寄存器等不同宏中的一个位的逻辑功能进行了优化。除了亚微米栅极长度外,宏的掩模艺术品使用1微米CMOS基本规则进行布局。表1总结了该技术的一些特点,该技术利用两层金属进行布线,并在扩散和多晶硅上使用自对齐钛硅化物。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Two CMOS 0.5µm 32b digital macros
A P.41R OF 5-port general-purpose-register file (GPK) and an Arithmetic-Logic-Unit ALU will be reported. Based on a 0 . 5 ~ gate CMOS technology , an access time of 6.5ns in the GPR and an ADD speed of 8.0ns in the ALU have been measured. Sub ns performance reflects feasibility of operating CMOS FET system above 50”l-Iz. The macro circuits were custom-designed with a structured bit-cell approach. The logic function of one bit in different macros such as GPR, ALU and LSSD register, has been optimized within a given bit-width. Mask artwork of the macros is laid out using l p m CMOS ground rules with the exception of sub-micron gate length. Table 1 summarizes some features of the technology which utilizes two levels of metal for wiring and self-aligned Ti-silicide both on diffusion and polysilicon.
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