UTBOX-FDSOI PMOS晶体管中NBTI可靠性的新见解

2012 IEEE International Integrated Reliability Workshop Final Report Pub Date : 2012-10-01 DOI:10.1109/IIRW.2012.6468923

D. Angot, D. Rideau, A. Bravaix, F. Monsieur, Y. M. Randriamihaja, V. Huard

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引用次数: 2

摘要

基于容性测量和TCAD模拟，在较大的体偏置范围内，评估了NBTI对FDSOI晶体管氧化硅界面的影响。通过对FDSOI结构中反向偏压依赖性的精确模拟，建立了物理模型，充分分析了FDSOI结构的退化机理，重现了FDSOI结构的实验行为。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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New insights into NBTI reliability in UTBOX-FDSOI PMOS transistors

Based on capacitive measurements combined with TCAD simulations, in a wide range of bulk biases, the impact of NBTI on both oxide-silicon interfaces of FDSOI transistors is evaluated. Physical modeling is proposed to fully analyze the degradation mechanisms and reproduce the experimental behaviors through the help of accurate simulations of the back bias dependence in the FDSOI structure.

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来源期刊

2012 IEEE International Integrated Reliability Workshop Final Report

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