Shen-Li Chen, T. Wu, Hung-Wei Chen, C. Shih, Po-Ying Chen
{"title":"在高压nLDMOS中实现了一种新的弱回调特性","authors":"Shen-Li Chen, T. Wu, Hung-Wei Chen, C. Shih, Po-Ying Chen","doi":"10.1109/ISNE.2010.5669169","DOIUrl":null,"url":null,"abstract":"A drain-side engineering to LDMOS by doping concentration and length modulations of the N-type adaptive layer to obtain weak snapback characteristic nLDMOS are presented in this work. It's a novel method to reduce trigger voltage(Vt1) and to increase holding voltage(Vh). These efforts will be very suitable for the HV power management IC applications. Meanwhile, in this work, we will discuss trigger voltage, holding voltage and Ron resistance distribution of these novel HV nLDMOS devices.","PeriodicalId":412093,"journal":{"name":"2010 International Symposium on Next Generation Electronics","volume":"57 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"To achieve a novel weak snapback characteristic in the high voltage nLDMOS\",\"authors\":\"Shen-Li Chen, T. Wu, Hung-Wei Chen, C. Shih, Po-Ying Chen\",\"doi\":\"10.1109/ISNE.2010.5669169\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A drain-side engineering to LDMOS by doping concentration and length modulations of the N-type adaptive layer to obtain weak snapback characteristic nLDMOS are presented in this work. It's a novel method to reduce trigger voltage(Vt1) and to increase holding voltage(Vh). These efforts will be very suitable for the HV power management IC applications. Meanwhile, in this work, we will discuss trigger voltage, holding voltage and Ron resistance distribution of these novel HV nLDMOS devices.\",\"PeriodicalId\":412093,\"journal\":{\"name\":\"2010 International Symposium on Next Generation Electronics\",\"volume\":\"57 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-12-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 International Symposium on Next Generation Electronics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISNE.2010.5669169\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 International Symposium on Next Generation Electronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISNE.2010.5669169","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
To achieve a novel weak snapback characteristic in the high voltage nLDMOS
A drain-side engineering to LDMOS by doping concentration and length modulations of the N-type adaptive layer to obtain weak snapback characteristic nLDMOS are presented in this work. It's a novel method to reduce trigger voltage(Vt1) and to increase holding voltage(Vh). These efforts will be very suitable for the HV power management IC applications. Meanwhile, in this work, we will discuss trigger voltage, holding voltage and Ron resistance distribution of these novel HV nLDMOS devices.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
