金属栅极的颗粒功函数变化引起finfet漏极势垒降低(DIBL)的波动

Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) Pub Date : 2014-04-28 DOI:10.1109/VLSI-TSA.2014.6839648

T. Matsukawa, K. Fukuda, Y. Liu, K. Endo, J. Tsukada, Y. Ishikawa, H. Yamauchi, S. O'Uchi, S. Migita, W. Mizubayashi, Y. Morita, H. Ota, M. Masahara

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引用次数: 3

摘要

本文详细研究了finfet的漏极势垒降低(DIBL)波动与金属栅极(mg)中功函数变化(WFV)的关系。由于WFV的影响，具有多晶TiN MG的finfet比具有非晶TaSiN MG的finfet表现出更大的DIBL波动。采用三维TCAD仿真技术，对TiN颗粒WFV进行了建模。通过再现WFV引起的DIBL波动，讨论了WFV引起DIBL波动的机理。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Fluctuation in drain induced barrier lowering (DIBL) for FinFETs caused by granular work function variation of metal gates

Fluctuation in drain induced barrier lowering (DIBL) has been investigated in detail for FinFETs with regard to work function variation (WFV) in the metal gates (MGs). The FinFETs with a polycrystalline TiN MG exhibit significantly larger fluctuation in DIBL than that for an amorphous TaSiN MG because of the WFV. The granular WFV of TiN was modeled using 3D TCAD simulation. By reproducing the DIBL fluctuation caused by the WFV, mechanism of how the WFV causes the DIBL fluctuation is discussed.

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Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)

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