自修复SRAM以减少奈米记忆体参数失效

2006 Symposium on VLSI Circuits, 2006. Digest of Technical Papers. Pub Date : 2006-06-15 DOI:10.1109/VLSIC.2006.1705345

S. Mukhopadhyay, Keejong Kim, H. Mahmoodi, A. Datta, Dongkyu Park, K. Roy

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引用次数: 15

摘要

我们提出了一种自我修复的SRAM，利用片上泄漏传感器和适当的体偏置来减少参数故障。预测70纳米技术的模拟显示，SRAM产量提高了5-40%(取决于芯片间Vt的变化)。制作了一个测试芯片，并在0.13 μ m CMOS中进行了测试，以演示自修复系统的运行

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Self-Repairing SRAM for Reducing Parametric Failures in Nanoscaled Memory

We present a self-repairing SRAM to reduce parametric failures using an on-chip leakage sensor and application of proper body bias. Simulations in a predictive 70nm technology show 5-40% (depending on inter-die Vt variation) improvement in SRAM yield. A test-chip is fabricated and measured in 0.13 mum CMOS to demonstrate operation of the self-repair system

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2006 Symposium on VLSI Circuits, 2006. Digest of Technical Papers.

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