{"title":"硅和磷的电子撞击双电离","authors":"Santosh Kumar","doi":"10.5958/2320-3218.2018.00007.6","DOIUrl":null,"url":null,"abstract":"I have calculated double ionization cross sections of silicon and phosphorus by electron impact using double binary encounter model. Hartree-Fock momentum distribution has been used for both the ejected electrons during collision process. Contributions from inner shell in the double ionization have been included in the calculations. The results obtained have been found in reasonably good agreement with the experimental observations.","PeriodicalId":445078,"journal":{"name":"Bulletin of Pure & Applied Sciences- Physics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Double ionization of silicon and phosphorus by electron-impact\",\"authors\":\"Santosh Kumar\",\"doi\":\"10.5958/2320-3218.2018.00007.6\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"I have calculated double ionization cross sections of silicon and phosphorus by electron impact using double binary encounter model. Hartree-Fock momentum distribution has been used for both the ejected electrons during collision process. Contributions from inner shell in the double ionization have been included in the calculations. The results obtained have been found in reasonably good agreement with the experimental observations.\",\"PeriodicalId\":445078,\"journal\":{\"name\":\"Bulletin of Pure & Applied Sciences- Physics\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Bulletin of Pure & Applied Sciences- Physics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.5958/2320-3218.2018.00007.6\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Bulletin of Pure & Applied Sciences- Physics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.5958/2320-3218.2018.00007.6","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Double ionization of silicon and phosphorus by electron-impact
I have calculated double ionization cross sections of silicon and phosphorus by electron impact using double binary encounter model. Hartree-Fock momentum distribution has been used for both the ejected electrons during collision process. Contributions from inner shell in the double ionization have been included in the calculations. The results obtained have been found in reasonably good agreement with the experimental observations.