新的全局快门CMOS成像仪，每像素2个晶体管

2008 Symposium on VLSI Technology Pub Date : 2008-06-17 DOI:10.1109/VLSIT.2008.4588616

M. Funaki, T. Shimizu, S. Orihara, H. kawanaka, M. Kurihara, H. Sato, N. Katsumata, M. Oikawa, J. Higuchi, K. Oe, R. Kuga, K. Maki, T. Nishibata

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引用次数: 1

摘要

我们提出了一种新的全局快门CMOS成像仪，每像素2个晶体管。第一个晶体管是环栅晶体管，用于积累调制阈值电压的孔。第二种是转移栅极晶体管，它在所有像素中同时将孔从PD转移到环栅晶体管。简单的结构使我们能够实现5.4 um像素间距，kTC无噪声，以及使用0.35 um技术的全局快门传感器。

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New global shutter CMOS imager with 2 transistors per pixel

We present a new global shutter CMOS imager with 2 transistors per pixel. The first transistor is a ring gate transistor for accumulating holes that modulate threshold voltage. The second one is a transfer gate transistor that transfers holes from a PD to the ring gate transistor at the same time in all pixels. Simple structure allows us to realize 5.4 um pixel pitch, kTC noise free, and global shutter sensor using 0.35 um technology.

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2008 Symposium on VLSI Technology

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