自旋在玻璃上作为非晶吸收层光电探测器的抗反射层

Proceedings of the 2000 Third IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.00TH8474) Pub Date : 2000-03-15 DOI:10.1109/ICCDCS.2000.869850

A. Jacome, A. M. Castillo, C. Z. Islas

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引用次数: 1

摘要

一种硅基分离吸收倍增雪崩光电二极管(SAMAPD)表面涂有自旋玻璃(SOG)作为抗反射(AR)层。固化温度仅为200℃，固化时间为6 ~ 10小时。结果表明，SOG的折射率和厚度是可以控制的。与没有AR层的SAMAPD相比，有AR层的SAMAPD在0.85 /spl mu/m下的光电流提高了20%。测量AR涂层SAMAPD的光电流时，可以观察到在0.8 ~ 0.9 /spl mu/m范围内的平坦响应。

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Spin on glass as an antireflection layer on amorphous absorption layer photodetectors

A silicon based Separated-Absorption-Multiplication Avalanche Photo Diode (SAMAPD) is coated with Spin On Glass (SOG) as an antireflection (AR) layer. The curing temperature is only 200/spl deg/C, for curing times ranging from 6 to 10 hours. It is demonstrated that the refractive index and thickness of the SOG can be controlled. The SAMAPD with an AR layer shows an improvement in the photocurrent up to 20% at 0.85 /spl mu/m when compared with that without AR layer. A flat response in the range 0.8-0.9 /spl mu/m is observed when the photocurrent of the AR coated SAMAPD is measured.

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Proceedings of the 2000 Third IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.00TH8474)

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