SOI基板上高频单片PIN二极管的特性与建模

Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004. Pub Date : 2004-09-08 DOI:10.1109/SMIC.2004.1398216

E. Duraz, L. Duvillaret, P. Ferrari, J. Coutaz, J. Ghesquiers, É. Estebe

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引用次数: 0

摘要

我们提出了在SOI衬底上从40 MHz到40 GHz和从74到114 GHz的PIN二极管的高频测量，仿真和建模。通过仿真和测量的比较，我们得到了一个频率相关的反向偏置PIN二极管电容。我们表明，注入二极管本征通道的自由载流子诱导硅衬底的频率相关复介电常数，该介电常数负责PIN二极管电容的频率行为。此外，该模型不需要可调参数，因为所需的所有参数都很容易测量。

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Characterization and modeling of high frequency monolithic PIN diodes on SOI substrate

We present high frequency measurements, simulation and modeling of PIN diodes on SOI substrate from 40 MHz to 40 GHz and from 74 to 114 GHz. Comparison between simulations and measurements brings to the fore a frequency dependent PIN diode capacitance with reverse bias. We show that the free carriers injected in the diode intrinsic channel induce a frequency dependent complex permittivity of the silicon substrate that is responsible for the frequency behaviour of the PIN diode capacitance. Moreover, no adjustable parameter is required in this model as all the required parameters can be easily measured.

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Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004.

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