7b1gs /s 7.2mW非二进制2b/周期SAR ADC,具有寄存器到dac的直接控制

Hyeok-Ki Hong, Wan Kim, Sun-Jae Park, Michael Choi, Hojin Park, S. Ryu
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引用次数: 48

摘要

提出了一种45nm CMOS 7b非二进制2b/周期SAR ADC,在1.25V电源下工作速度高达1GS/s。在2b/周期结构中使用非二进制决策方案进行决策误差校正,不仅提高了ADC速度,降低了DAC的设置要求,而且使性能对参考波动和信号相关的比较器偏移量变化具有鲁棒性。提出的动态寄存器和寄存器到dac的直接控制方案通过最小化决策回路中的逻辑延迟来提高转换速度。在1 GS/s的采样率下,芯片的峰值SNDR为41.6dB,在1.3GHz信号频率下ENOB保持在6b以上。FoM是80fJ/转换步,速度为1GS/s,功耗为7.2mW。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A 7b 1GS/s 7.2mW nonbinary 2b/cycle SAR ADC with register-to-DAC direct control
A 45nm CMOS 7b nonbinary 2b/cycle SAR ADC that operates up to 1GS/s with a 1.25V supply is presented. Use of a nonbinary decision scheme for decision error correction in a 2b/cycle structure not only increases the ADC speed with a relaxed DAC settling requirement but also makes the performance robust to reference fluctuation and signal-dependent comparator offset variation. Proposed dynamic registers and a register-to-DAC direct control scheme enhance the conversion speed by minimizing logic delay in the decision loop. At a sampling rate of 1 GS/s, the chip achieves a peak SNDR of 41.6dB and maintains ENOB higher than 6b up to 1.3GHz signal frequency. The FoM is 80fJ/ conversion-step at 1GS/s with a power consumption of 7.2mW.
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