APCVD掺杂氧化物在KOH溶液中用作蚀刻掩膜

1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings Pub Date : 1996-10-09 DOI:10.1109/SMICND.1996.557363

P. Cosmin, M. Modreanu, S. Cosmin, C. Dunare, D. Popescu

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引用次数: 1

摘要

本文研究了APCVD掺杂氧化物在硅衬底上的沉积。研究了不同磷硼含量的二氧化硅、磷硅酸盐、硼硅酸盐、硼磷硅酸盐玻璃薄膜在KOH溶液中作为蚀刻掩膜。实验结果表明，磷含量为4 wt%、硼含量为23 wt%的浓化硼磷玻璃是最佳的膜，浓化硼磷玻璃也取得了良好的效果。所采用的致密化处理与铝金属化工艺兼容。

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APCVD doped oxides used as etch mask in KOH solution

This paper presents a study of APCVD doped oxides deposited on silicon substrate. Films of silicon dioxide, phosphosilicate, borosilicate, borophosphosilicate glass with different content of phosphorus and boron were studied as masks for etching in KOH solution. The experiments draw the conclusion that the best film is densified borophosphosilicate glass with 4 wt% P and 23 wt.% B. Also, good results were obtained for densified borosilicate glass. The densification treatment used is compatible with the aluminium metallisation process.

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来源期刊

1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings

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