神经形态应用中氧化物忆阻器的建模与实现

2012 13th International Workshop on Cellular Nanoscale Networks and their Applications Pub Date : 2012-10-18 DOI:10.1109/CNNA.2012.6331462

Ting Chang, P. Sheridan, W. Lu

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引用次数: 10

摘要

我们报道了用于神经形态应用的纳米级氧化钨(WOx)忆阻器(忆阻器)器件的制造，建模和实现。同时考虑离子漂移和扩散，可以准确地预测器件的行为。短期记忆和记忆增强现象，以及尖峰率，时间和联想的影响已被证明。SPICE建模已经实现，允许电路级实现。

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Modeling and implementation of oxide memristors for neuromorphic applications

We report the fabrication, modeling and implementation of nanoscale tungsten-oxide (WOx) memristive (memristor) devices for neuromorphic applications. The device behaviors can be predicted accurately by considering both ion drift and diffusion. Short-term memory and memory enhancement phenomena, and the effects of spike rate, timing and associativity have been demonstrated. SPICE modeling has been achieved that allows circuit-level implementations.

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2012 13th International Workshop on Cellular Nanoscale Networks and their Applications

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