32纳米及以上节点浮动体内存(FBRAM)技术概述及未来挑战

ESSDERC 2008 - 38th European Solid-State Device Research Conference Pub Date : 2008-11-18 DOI:10.1109/ESSDERC.2008.4681692

T. Hamamoto, T. Ohsawa

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引用次数: 8

摘要

浮体电池(FBC)是一种基于SOI衬底的单晶体管存储电池，其目标是在SOC上实现高密度嵌入式存储。为了验证这种存储单元技术，设计并成功开发了具有FBC的128 Mb浮动体RAM (FBRAM)。综述了存储单元的设计和实验结果，包括单存储单元(1Cell/Bit)操作。在实验结果的基础上，讨论了FBC的可扩展性。

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Overview and future challenges of Floating Body RAM (FBRAM) technology for 32nm technology node and beyond

Floating body cell (FBC) is a one-transistor memory cell on SOI substrate, which aims high density embedded memory on SOC. In order to verify this memory cell technology, a 128 Mb floating body RAM (FBRAM) with FBC has been designed and successfully developed. The memory cell design and the experimental results, including single cell (1Cell/Bit) operation, are reviewed. Based on the experimental results, the scalability of FBC is also discussed.

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ESSDERC 2008 - 38th European Solid-State Device Research Conference

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