提出了一种具有高关断电流和高短路能力的2.5 kV功率组IGBT芯片设计理念

11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312) Pub Date : 1999-05-26 DOI:10.1109/ISPSD.1999.764091

K. Yoshikawa, T. Koga, T. Fujii, T. Katoh, Y. Takahashi, Y. Seki

{"title":"提出了一种具有高关断电流和高短路能力的2.5 kV功率组IGBT芯片设计理念","authors":"K. Yoshikawa, T. Koga, T. Fujii, T. Katoh, Y. Takahashi, Y. Seki","doi":"10.1109/ISPSD.1999.764091","DOIUrl":null,"url":null,"abstract":"A novel concept for achieving high electrical withstand capability on a high power IGBT is discussed in this paper. It should be noted that high turn-off capability of 6600 amperes (at peak collector voltage=2500 V, T/sub j/=125/spl deg/C) and the short circuit capability of over 50 /spl mu/s (at V/sub CC/=1600 V, T/sub j/=125/spl deg/C) are successfully attained by a newly developed power pack IGBT. In this paper, simulation results based upon the novel design concept are presented. Furthermore, experimental results are demonstrated to corroborate the simulation results.","PeriodicalId":352185,"journal":{"name":"11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-05-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"A novel IGBT chip design concept of high turn-off current capability and high short circuit capability for 2.5 kV power pack IGBT\",\"authors\":\"K. Yoshikawa, T. Koga, T. Fujii, T. Katoh, Y. Takahashi, Y. Seki\",\"doi\":\"10.1109/ISPSD.1999.764091\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A novel concept for achieving high electrical withstand capability on a high power IGBT is discussed in this paper. It should be noted that high turn-off capability of 6600 amperes (at peak collector voltage=2500 V, T/sub j/=125/spl deg/C) and the short circuit capability of over 50 /spl mu/s (at V/sub CC/=1600 V, T/sub j/=125/spl deg/C) are successfully attained by a newly developed power pack IGBT. In this paper, simulation results based upon the novel design concept are presented. Furthermore, experimental results are demonstrated to corroborate the simulation results.\",\"PeriodicalId\":352185,\"journal\":{\"name\":\"11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1999-05-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISPSD.1999.764091\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.1999.764091","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

本文讨论了在大功率IGBT上实现高耐电性能的新概念。值得注意的是，新开发的电源组IGBT成功地获得了6600安培的高关断能力(峰值集电极电压=2500 V, T/sub j/=125/spl度/C)和超过50 /spl μ s的短路能力(在V/sub CC/=1600 V, T/sub j/=125/spl度/C)。本文给出了基于新设计理念的仿真结果。并对实验结果进行了验证。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

A novel IGBT chip design concept of high turn-off current capability and high short circuit capability for 2.5 kV power pack IGBT

A novel concept for achieving high electrical withstand capability on a high power IGBT is discussed in this paper. It should be noted that high turn-off capability of 6600 amperes (at peak collector voltage=2500 V, T/sub j/=125/spl deg/C) and the short circuit capability of over 50 /spl mu/s (at V/sub CC/=1600 V, T/sub j/=125/spl deg/C) are successfully attained by a newly developed power pack IGBT. In this paper, simulation results based upon the novel design concept are presented. Furthermore, experimental results are demonstrated to corroborate the simulation results.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312)

自引率

0.00%

发文量