{"title":"控制薄膜电阻器的TCR","authors":"P. Steinmann, S. M. Jacobsen, R. Higgins","doi":"10.1109/ESSDERC.2000.194812","DOIUrl":null,"url":null,"abstract":"We demonstrate that the temperature coefficient of resistance (TCR) of NiCr thin film resistors can be effectively controlled by changing the film thickness over a certain range. We have observed a direct dependency between TCR and sheet resistance, which can be expressed by the equation: TCR(in ppm/C)=525*exp(0.01*sheet (in Ohms/sq)). This behavior can be explained by considering the transition from a bulk conductivity mechanism to a mechanism dominated by charge carrier creation and tunneling between metallic islands.","PeriodicalId":354721,"journal":{"name":"30th European Solid-State Device Research Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-09-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Controlling the TCR of thin film resistors\",\"authors\":\"P. Steinmann, S. M. Jacobsen, R. Higgins\",\"doi\":\"10.1109/ESSDERC.2000.194812\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We demonstrate that the temperature coefficient of resistance (TCR) of NiCr thin film resistors can be effectively controlled by changing the film thickness over a certain range. We have observed a direct dependency between TCR and sheet resistance, which can be expressed by the equation: TCR(in ppm/C)=525*exp(0.01*sheet (in Ohms/sq)). This behavior can be explained by considering the transition from a bulk conductivity mechanism to a mechanism dominated by charge carrier creation and tunneling between metallic islands.\",\"PeriodicalId\":354721,\"journal\":{\"name\":\"30th European Solid-State Device Research Conference\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-09-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"30th European Solid-State Device Research Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ESSDERC.2000.194812\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"30th European Solid-State Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSDERC.2000.194812","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
We demonstrate that the temperature coefficient of resistance (TCR) of NiCr thin film resistors can be effectively controlled by changing the film thickness over a certain range. We have observed a direct dependency between TCR and sheet resistance, which can be expressed by the equation: TCR(in ppm/C)=525*exp(0.01*sheet (in Ohms/sq)). This behavior can be explained by considering the transition from a bulk conductivity mechanism to a mechanism dominated by charge carrier creation and tunneling between metallic islands.
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