高频DCM反激变换器的设计考虑

J. Lee, Kyung-Hwan Lee, Jung-Ik Ha
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引用次数: 6

摘要

本文介绍了一种高频(≥1mhz)断续导通模式(DCM)反激变换器的设计考虑。随着开关频率的增加,开关器件的寄生电容导致的开关损耗和不良影响等问题也随之加剧。针对这些问题,提出了直流链路电容、PCB变压器、缓冲器、磁化电感、开关、输出电容和匝比的设计说明。根据说明,实现了1 mhz 65 w反激变换器。在直流100-373 V输入电压下,其输出电压调节至19 V。给出了实验结果和损耗击穿分析。为了观察开关器件电容变化的影响,测试了Si和SiC MOSFET开关。比较了两种情况下的开关波形和效率。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Design considerations for high frequency DCM flyback converter
This paper presents design considerations for a high frequency (≥1 MHz) Discontinuous Conduction Mode (DCM) flyback converter. As switching frequency increases, the problems such as switching loss and undesirable effects due to the parasitic capacitance of switching device are exacerbated. Considering these issues, design instructions are proposed about DC link capacitance, PCB transformer, snubber, magnetizing inductance, switch, output capacitance and turn ratio. Following the instructions, 1-MHz 65-W flyback converter was implemented. Its output voltage was regulated to 19 V in DC 100-373 V input voltage. The experimental results and loss breakdown analysis are given. To observe the effect of variation in switching device capacitance, Si and SiC MOSFET switches are tested. The switching waveforms and the efficiency of the two cases are compared.
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