在相变存储器中使用软判决纠错码

Binbin Li, Bolun Zhang, Yifan Zhang, Dongmei Xue
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引用次数: 4

摘要

研究表明,随着时间的推移,相变材料的电阻会越来越大。采用基于时间感知的软判决纠错码,可以有效地对多电平PCM中的错误进行纠错,但需要LLR进行解码。准确的LLR需要准确地读取电阻,这会导致更长的传输延迟。在本文中,我们提出了一种非均匀纠错策略,该策略可以降低读取级别并保持误码率性能。利用LDPC对每单元4级的PCM进行校正,并通过计算机仿真得到了校正结果。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Use soft-decision error-correction codes in Phase-Change Memory
Researches indicate that the resistance of phase-change material will become larger over the time. Use time-aware based soft-decision error correction code, which needs LLR to decode, can correct the errors in multilevel PCM effectively. Accurate LLR needs to read the resistance accurately, which will lead to a longer transmission latency. In this paper, we proposed a non-uniform correction strategy, which can reduce the read levels maintaining bit-error-rate performance. We use LDPC in correction of 4-level per cell PCM, and get the result via computer simulation.
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