B. Martineau, A. Cathelin, F. Danneville, A. Kaiser, G. Dambrine, S. Lépilliet, F. Gianesello, D. Belot
{"title":"80 GHz低噪声放大器在65nm CMOS SOI","authors":"B. Martineau, A. Cathelin, F. Danneville, A. Kaiser, G. Dambrine, S. Lépilliet, F. Gianesello, D. Belot","doi":"10.1109/ESSCIRC.2007.4430315","DOIUrl":null,"url":null,"abstract":"A 1 stage and 3 stages 80 GHz low noise amplifiers (LNA) are presented in this paper. Both mm-wave LNA are integrated in a 65 nm CMOS SOI process. The one stage amplifier exhibits 2.1 dB gain and a noise figure of 4.5 dB at 80 GHz. The input and output return losses are -13 dB and -6 dB respectively. This amplifier consumes 22 mW from a supply voltage of 1.2 V and occupies an area of 0.64 mm2 including the pads. The 3 stages LNA presents a gain of 7.2 dB and a noise figure of 5.7 dB at 80 GHz with an input and output matching better than -14 dB and -10 dB respectively. The 3 stages amplifier consumes 70 mW from a supply voltage of 1V and occupies an area of 0.98 mm2 including pads.","PeriodicalId":121828,"journal":{"name":"ESSCIRC 2007 - 33rd European Solid-State Circuits Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"26","resultStr":"{\"title\":\"80 GHz low noise amplifiers in 65nm CMOS SOI\",\"authors\":\"B. Martineau, A. Cathelin, F. Danneville, A. Kaiser, G. Dambrine, S. Lépilliet, F. Gianesello, D. Belot\",\"doi\":\"10.1109/ESSCIRC.2007.4430315\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A 1 stage and 3 stages 80 GHz low noise amplifiers (LNA) are presented in this paper. Both mm-wave LNA are integrated in a 65 nm CMOS SOI process. The one stage amplifier exhibits 2.1 dB gain and a noise figure of 4.5 dB at 80 GHz. The input and output return losses are -13 dB and -6 dB respectively. This amplifier consumes 22 mW from a supply voltage of 1.2 V and occupies an area of 0.64 mm2 including the pads. The 3 stages LNA presents a gain of 7.2 dB and a noise figure of 5.7 dB at 80 GHz with an input and output matching better than -14 dB and -10 dB respectively. The 3 stages amplifier consumes 70 mW from a supply voltage of 1V and occupies an area of 0.98 mm2 including pads.\",\"PeriodicalId\":121828,\"journal\":{\"name\":\"ESSCIRC 2007 - 33rd European Solid-State Circuits Conference\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"26\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ESSCIRC 2007 - 33rd European Solid-State Circuits Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ESSCIRC.2007.4430315\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ESSCIRC 2007 - 33rd European Solid-State Circuits Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSCIRC.2007.4430315","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 1 stage and 3 stages 80 GHz low noise amplifiers (LNA) are presented in this paper. Both mm-wave LNA are integrated in a 65 nm CMOS SOI process. The one stage amplifier exhibits 2.1 dB gain and a noise figure of 4.5 dB at 80 GHz. The input and output return losses are -13 dB and -6 dB respectively. This amplifier consumes 22 mW from a supply voltage of 1.2 V and occupies an area of 0.64 mm2 including the pads. The 3 stages LNA presents a gain of 7.2 dB and a noise figure of 5.7 dB at 80 GHz with an input and output matching better than -14 dB and -10 dB respectively. The 3 stages amplifier consumes 70 mW from a supply voltage of 1V and occupies an area of 0.98 mm2 including pads.
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