M. Miura, H. Shimamoto, R. Hayami, A. Kodama, T. Tominari, T. Hashimoto, K. Washio
{"title":"通过促进发射极扩散过程优化SiGe HBT/BiCMOS垂直轮廓","authors":"M. Miura, H. Shimamoto, R. Hayami, A. Kodama, T. Tominari, T. Hashimoto, K. Washio","doi":"10.1109/BIPOL.2004.1365753","DOIUrl":null,"url":null,"abstract":"A new concept, promoting emitter diffusion (PED) process, by using high-temperature annealing, is proposed for fabricating high-performance SiGe HBTs. Both the cut-off frequency and maximum oscillation frequency exceeded 200 GHz when the annealing temperature was increased from 885/spl deg/C to 1000/spl deg/C. This PED process concept is based on the fact that the increased phosphorus diffusion can more than compensate for increased boron diffusion and decreased base thickness.","PeriodicalId":447762,"journal":{"name":"Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-12-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Optimization of vertical profiles of SiGe HBT/BiCMOS by promoting emitter diffusion process\",\"authors\":\"M. Miura, H. Shimamoto, R. Hayami, A. Kodama, T. Tominari, T. Hashimoto, K. Washio\",\"doi\":\"10.1109/BIPOL.2004.1365753\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A new concept, promoting emitter diffusion (PED) process, by using high-temperature annealing, is proposed for fabricating high-performance SiGe HBTs. Both the cut-off frequency and maximum oscillation frequency exceeded 200 GHz when the annealing temperature was increased from 885/spl deg/C to 1000/spl deg/C. This PED process concept is based on the fact that the increased phosphorus diffusion can more than compensate for increased boron diffusion and decreased base thickness.\",\"PeriodicalId\":447762,\"journal\":{\"name\":\"Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-12-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/BIPOL.2004.1365753\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BIPOL.2004.1365753","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Optimization of vertical profiles of SiGe HBT/BiCMOS by promoting emitter diffusion process
A new concept, promoting emitter diffusion (PED) process, by using high-temperature annealing, is proposed for fabricating high-performance SiGe HBTs. Both the cut-off frequency and maximum oscillation frequency exceeded 200 GHz when the annealing temperature was increased from 885/spl deg/C to 1000/spl deg/C. This PED process concept is based on the fact that the increased phosphorus diffusion can more than compensate for increased boron diffusion and decreased base thickness.
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