{"title":"纳米多层法制备取向SnS薄膜","authors":"Zhan Xu, Yigang Chen, Wei-min Shi, Linjun Wang","doi":"10.1117/12.888219","DOIUrl":null,"url":null,"abstract":"Tin sulfide (SnS) thin films were prepared by nano-multilayer method on glass substrate followed by thermal annealing at 400 degrees for 3 hours in Argon atmosphere. The films showed strong (040) crystal orientation for the films with stoichiometric ratio (Sn:S) of 1:1. The film had an optical energy band gap Eg=1.44 ev and a P-type conductivity with a resistivity of 5 Ω•cm.","PeriodicalId":316559,"journal":{"name":"International Conference on Thin Film Physics and Applications","volume":"7995 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Oriented SnS thin films formed by nano-multilayer method\",\"authors\":\"Zhan Xu, Yigang Chen, Wei-min Shi, Linjun Wang\",\"doi\":\"10.1117/12.888219\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Tin sulfide (SnS) thin films were prepared by nano-multilayer method on glass substrate followed by thermal annealing at 400 degrees for 3 hours in Argon atmosphere. The films showed strong (040) crystal orientation for the films with stoichiometric ratio (Sn:S) of 1:1. The film had an optical energy band gap Eg=1.44 ev and a P-type conductivity with a resistivity of 5 Ω•cm.\",\"PeriodicalId\":316559,\"journal\":{\"name\":\"International Conference on Thin Film Physics and Applications\",\"volume\":\"7995 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-10-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Conference on Thin Film Physics and Applications\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1117/12.888219\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Conference on Thin Film Physics and Applications","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.888219","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Oriented SnS thin films formed by nano-multilayer method
Tin sulfide (SnS) thin films were prepared by nano-multilayer method on glass substrate followed by thermal annealing at 400 degrees for 3 hours in Argon atmosphere. The films showed strong (040) crystal orientation for the films with stoichiometric ratio (Sn:S) of 1:1. The film had an optical energy band gap Eg=1.44 ev and a P-type conductivity with a resistivity of 5 Ω•cm.
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