T. Sall, B. Hartiti, B. Marí, M. Miquel, L. Laânab, M. Fahoume
{"title":"[S]/ [In] = 3喷雾热解制备In2S3薄膜及表征","authors":"T. Sall, B. Hartiti, B. Marí, M. Miquel, L. Laânab, M. Fahoume","doi":"10.1109/IRSEC.2013.6529664","DOIUrl":null,"url":null,"abstract":"In2S3 thin films were elaborated onto glass substrate by spray pyrolysis method using sulphur-to-indium ratio ([S]/[In]) of 3 and different substrate temperatures. The as-deposited and annealing films were characterized by X-Ray Diffraction (XRD) for the structural, Energy Dispersive Spectroscopy (EDS) for the composition, Raman spectroscopy for samples quality and optical transmittance to measure gap energy. XRD revealed a β-In2S3 phase with a preferential orientation along (0 0 12) plane. Good stoichiometry was noticed in EDS measurement. Raman spectroscopy analysis shows a prominent of active modes of β-In2S3 films with annealing. This is confirming an improvement of structure cristallinity of all films and optical analysis shows a decrease of gap energy after annealing.","PeriodicalId":130577,"journal":{"name":"2013 International Renewable and Sustainable Energy Conference (IRSEC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":"{\"title\":\"Elaboration and characterization of In2S3 thin films by spray pyrolysis with [S]/ [In] = 3 ratio\",\"authors\":\"T. Sall, B. Hartiti, B. Marí, M. Miquel, L. Laânab, M. Fahoume\",\"doi\":\"10.1109/IRSEC.2013.6529664\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In2S3 thin films were elaborated onto glass substrate by spray pyrolysis method using sulphur-to-indium ratio ([S]/[In]) of 3 and different substrate temperatures. The as-deposited and annealing films were characterized by X-Ray Diffraction (XRD) for the structural, Energy Dispersive Spectroscopy (EDS) for the composition, Raman spectroscopy for samples quality and optical transmittance to measure gap energy. XRD revealed a β-In2S3 phase with a preferential orientation along (0 0 12) plane. Good stoichiometry was noticed in EDS measurement. Raman spectroscopy analysis shows a prominent of active modes of β-In2S3 films with annealing. This is confirming an improvement of structure cristallinity of all films and optical analysis shows a decrease of gap energy after annealing.\",\"PeriodicalId\":130577,\"journal\":{\"name\":\"2013 International Renewable and Sustainable Energy Conference (IRSEC)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-03-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"9\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 International Renewable and Sustainable Energy Conference (IRSEC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IRSEC.2013.6529664\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 International Renewable and Sustainable Energy Conference (IRSEC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRSEC.2013.6529664","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Elaboration and characterization of In2S3 thin films by spray pyrolysis with [S]/ [In] = 3 ratio
In2S3 thin films were elaborated onto glass substrate by spray pyrolysis method using sulphur-to-indium ratio ([S]/[In]) of 3 and different substrate temperatures. The as-deposited and annealing films were characterized by X-Ray Diffraction (XRD) for the structural, Energy Dispersive Spectroscopy (EDS) for the composition, Raman spectroscopy for samples quality and optical transmittance to measure gap energy. XRD revealed a β-In2S3 phase with a preferential orientation along (0 0 12) plane. Good stoichiometry was noticed in EDS measurement. Raman spectroscopy analysis shows a prominent of active modes of β-In2S3 films with annealing. This is confirming an improvement of structure cristallinity of all films and optical analysis shows a decrease of gap energy after annealing.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
