干蚀刻InGaAs/InAlAs hemt的低噪声性能与湿凹槽器件的比较

Proceedings of 8th International Conference on Indium Phosphide and Related Materials Pub Date : 1996-04-21 DOI:10.1109/ICIPRM.1996.492260

H. Duran, B. Klepser, W. Patrick, M. Schefer, R. Cheung, W. Bachtold

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引用次数: 1

摘要

制备了具有选择性干蚀刻和湿蚀刻栅极凹槽的晶格匹配InAlAs/InGaAs hemt，并进行了高频和噪声测量。噪声源参数的建模显示两种晶体管类型之间只有微小的差异。没有证据表明干蚀刻会降低器件在高频下的噪声性能。据我们所知，这是第一次报道干蚀刻InP hemt的低噪声性能。

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Low noise performance of dry etched InGaAs/InAlAs HEMTs in comparison with wet recessed devices

Lattice-matched InAlAs/InGaAs HEMTs with selectively dry etched and wet etched gate recesses have been fabricated and both high-frequency and noise measurements have been carried out. The modelling of the noise source parameters shows only minor difference between the two transistor types. There is no evidence of detrimental effects caused by dry etching that reduce the noise performance of the device at high frequencies. To our knowledge, this is the first report of low-noise performance for dry etched InP HEMTs.

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Proceedings of 8th International Conference on Indium Phosphide and Related Materials

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