采用双缓冲技术的高PSR输出-无电容LDO

R. Li, Xin Zhang, Yanhan Zeng, Yihan Lin, Jingci Yang, Hongzhou Tan
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引用次数: 1

摘要

本文提出了一种采用双缓冲器技术的无输出电容LDO稳压器,并在商用0.18µm CMOS工艺中进行了仿真。为了克服PSR与其他重要设计参数(如回路稳定性和负载能力)之间的权衡,所提出的LDO使用带二极管连接晶体管的PMOS缓冲器将电源纹波复制到通闸晶体管的栅极,并通过NMOS缓冲器扩展负载范围。仿真结果表明,在整个单位增益频率(UGF)下,PSR得到了有效提高,提高幅度可达40dB。此外,静态电流为33µA,最大负载电流为50 mA。此外,在1.2V至2V的电源范围内,负载稳压可达2µV/mA,线路稳压可达0.06mV/V。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
High PSR output-capacitor-less LDO with double buffers technique
An output-capacitorless LDO regulator with double buffers technique has been proposed and simulated in a commercial 0.18µm CMOS process in this paper. To get over the tradeoff between PSR against other important design parameters such as loop stability and load capability, the proposed LDO replicates a supply ripple to the gate of pass transistor using a PMOS buffer with diode connected transistor and extends the load range by an NMOS buffer. Simulation results verify that PSR is improved effectively in the whole unity gain frequency (UGF) and the improvement is up to 40dB. In addition, the quiescent current is 33µA, providing a maximum load current of 50 mA. Besides, excellent load regulation of 2µ V/mA and line regulation of 0.06mV/V are obtained with supply from 1.2V to 2V.
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