P. Rolland, M. Friscourt, C. Dalle, D. Lippens, N. Haese
{"title":"毫米波范围内的双端器件:物理分析和未来趋势","authors":"P. Rolland, M. Friscourt, C. Dalle, D. Lippens, N. Haese","doi":"10.1109/EUMA.1990.336168","DOIUrl":null,"url":null,"abstract":"This paper reviews the advance made in the perfomance of millimeter-wave two-terminal devices, mainly Gunn, IMPATT and resonant-tunneling diodes, on the basis of the semiconductor material systems used (Si, GaAs, InP).","PeriodicalId":248044,"journal":{"name":"1990 20th European Microwave Conference","volume":"5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1990-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Two-Terminal Devices in Millimeter-Wave Range: Physical Analysis and Future Trends\",\"authors\":\"P. Rolland, M. Friscourt, C. Dalle, D. Lippens, N. Haese\",\"doi\":\"10.1109/EUMA.1990.336168\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper reviews the advance made in the perfomance of millimeter-wave two-terminal devices, mainly Gunn, IMPATT and resonant-tunneling diodes, on the basis of the semiconductor material systems used (Si, GaAs, InP).\",\"PeriodicalId\":248044,\"journal\":{\"name\":\"1990 20th European Microwave Conference\",\"volume\":\"5 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1990-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1990 20th European Microwave Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EUMA.1990.336168\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1990 20th European Microwave Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EUMA.1990.336168","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Two-Terminal Devices in Millimeter-Wave Range: Physical Analysis and Future Trends
This paper reviews the advance made in the perfomance of millimeter-wave two-terminal devices, mainly Gunn, IMPATT and resonant-tunneling diodes, on the basis of the semiconductor material systems used (Si, GaAs, InP).
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
