{"title":"用于光接收的高比特率GaAs MESFET放大器的优化","authors":"R. E. Saad, R. F. Souza","doi":"10.1109/ITS.1990.175647","DOIUrl":null,"url":null,"abstract":"A performance optimization of a transimpedance preamplifier used for 1.3- mu m digital optical reception is presented. The influence of the bias resistor on the high-frequency behavior of two GaAs MESFET circuits is analyzed. The two circuit configurations are analyzed with regard to sensitivity and dynamic range, using the Y parameters. It is shown that, although the number of components and the sensitivity of the two configurations are the same, the dynamic range is noticeably different.<<ETX>>","PeriodicalId":405932,"journal":{"name":"SBT/IEEE International Symposium on Telecommunications","volume":"314 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1990-09-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Optimization of a high bit rate GaAs MESFET amplifier for optical reception\",\"authors\":\"R. E. Saad, R. F. Souza\",\"doi\":\"10.1109/ITS.1990.175647\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A performance optimization of a transimpedance preamplifier used for 1.3- mu m digital optical reception is presented. The influence of the bias resistor on the high-frequency behavior of two GaAs MESFET circuits is analyzed. The two circuit configurations are analyzed with regard to sensitivity and dynamic range, using the Y parameters. It is shown that, although the number of components and the sensitivity of the two configurations are the same, the dynamic range is noticeably different.<<ETX>>\",\"PeriodicalId\":405932,\"journal\":{\"name\":\"SBT/IEEE International Symposium on Telecommunications\",\"volume\":\"314 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1990-09-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"SBT/IEEE International Symposium on Telecommunications\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ITS.1990.175647\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"SBT/IEEE International Symposium on Telecommunications","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ITS.1990.175647","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Optimization of a high bit rate GaAs MESFET amplifier for optical reception
A performance optimization of a transimpedance preamplifier used for 1.3- mu m digital optical reception is presented. The influence of the bias resistor on the high-frequency behavior of two GaAs MESFET circuits is analyzed. The two circuit configurations are analyzed with regard to sensitivity and dynamic range, using the Y parameters. It is shown that, although the number of components and the sensitivity of the two configurations are the same, the dynamic range is noticeably different.<>
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