{"title":"碳纳米管阴极的导通领域研究","authors":"S. M. Chung","doi":"10.1109/IVEC.2011.5746895","DOIUrl":null,"url":null,"abstract":"Carbon nanotube (CNT) cathode is considered a hopeful new cathode for various vacuum electronics devices, and the most important specifications are turn-on field and current density. One factor that affects turn-on field most is the Schottky barrier between CNT and the metal electrode in CNT cathode. We manage to reduce this barrier by using metal-CNT hot-bonding process and found the turn-on field improved to 1–2 V/μm. Current density is found related to microscopic shielding effect, and the heating results to shifting of emission sites, thus a lowered average current density and fluctuation in emission current.","PeriodicalId":106174,"journal":{"name":"2011 IEEE International Vacuum Electronics Conference (IVEC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-02-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"On the turn-on field of carbon nanotube cathode\",\"authors\":\"S. M. Chung\",\"doi\":\"10.1109/IVEC.2011.5746895\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Carbon nanotube (CNT) cathode is considered a hopeful new cathode for various vacuum electronics devices, and the most important specifications are turn-on field and current density. One factor that affects turn-on field most is the Schottky barrier between CNT and the metal electrode in CNT cathode. We manage to reduce this barrier by using metal-CNT hot-bonding process and found the turn-on field improved to 1–2 V/μm. Current density is found related to microscopic shielding effect, and the heating results to shifting of emission sites, thus a lowered average current density and fluctuation in emission current.\",\"PeriodicalId\":106174,\"journal\":{\"name\":\"2011 IEEE International Vacuum Electronics Conference (IVEC)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-02-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2011 IEEE International Vacuum Electronics Conference (IVEC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IVEC.2011.5746895\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 IEEE International Vacuum Electronics Conference (IVEC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IVEC.2011.5746895","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Carbon nanotube (CNT) cathode is considered a hopeful new cathode for various vacuum electronics devices, and the most important specifications are turn-on field and current density. One factor that affects turn-on field most is the Schottky barrier between CNT and the metal electrode in CNT cathode. We manage to reduce this barrier by using metal-CNT hot-bonding process and found the turn-on field improved to 1–2 V/μm. Current density is found related to microscopic shielding effect, and the heating results to shifting of emission sites, thus a lowered average current density and fluctuation in emission current.
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