0.18 μm BCD -High Voltage Gate (HVG) Process，用于解决高级显示驱动路线图

Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005. Pub Date : 2005-05-23 DOI:10.1109/ISPSD.2005.1488026

M. Annese, S. Bertaiola, G. Croce, A. Milani, R. Roggero, P. Galbiati, C. Contiero

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引用次数: 19

摘要

本文介绍了BCD-HVG8 (High Voltage Gate)工艺系列，这是一种针对小尺寸显示驱动器应用而优化的技术。具有厚栅氧化物(Vgs max=25V)的20/32/40V器件已成功集成在0.18µm BCD平台上。由于其灵活性和模块化，所获得的工艺适用于涵盖目前所有不同显示实现技术的设计要求:无源液晶显示器(LCD)，薄膜晶体管(TFT)或有机发光二极管(OLED)。

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0.18 μm BCD -High Voltage Gate (HVG) Process to address Advanced Display Drivers Roadmap

This paper describes BCD-HVG8 (High Voltage Gate) process family, a technology optimized to address the small size display driver applications. 20/32/40V devices with thick gate oxide (Vgs max=25V) have been successfully integrated in a 0.18µm BCD platform. Thanks to its flexibility and modularity, the obtained process is suitable to cover the design requirements coming from all of the present different display realization techniques: passive Liquid Crystal Display (LCD), Thin Film Transistors (TFT) or Organic Light Emission Diodes (OLED).

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Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005.

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