大量应用片上高k值MIM去耦电容器提高微处理器速度

2006 IEEE International Solid State Circuits Conference - Digest of Technical Papers Pub Date : 2006-09-18 DOI:10.1109/ISSCC.2006.1696280

H. Sánchez, B. Johnstone, Doug Roberts, Om Mandhana, B. Melnick, M. Celik, M. Baker, J. Hayden, B. Min, J. Edgerton, B. White

{"title":"大量应用片上高k值MIM去耦电容器提高微处理器速度","authors":"H. Sánchez, B. Johnstone, Doug Roberts, Om Mandhana, B. Melnick, M. Celik, M. Baker, J. Hayden, B. Min, J. Edgerton, B. White","doi":"10.1109/ISSCC.2006.1696280","DOIUrl":null,"url":null,"abstract":"A 90nm SOI microprocessor with massive application of high-k MIM decoupling capacitor modules is proven to increase the maximum frequency of the processor by close to 10%. Simulations predict reduced power supply noise leading to improvements in Fmax by close to the equivalent of a transistor node increase. Simulations of applying MIM decoupling capacitors to high-speed I/O and PLL circuits show that they can further enhance performance and area requirements for these critical circuits in advanced technologies","PeriodicalId":166617,"journal":{"name":"2006 IEEE International Solid State Circuits Conference - Digest of Technical Papers","volume":"260 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"19","resultStr":"{\"title\":\"Increasing Microprocessor Speed by Massive Application of On-Die High-K MIM Decoupling Capacitors\",\"authors\":\"H. Sánchez, B. Johnstone, Doug Roberts, Om Mandhana, B. Melnick, M. Celik, M. Baker, J. Hayden, B. Min, J. Edgerton, B. White\",\"doi\":\"10.1109/ISSCC.2006.1696280\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A 90nm SOI microprocessor with massive application of high-k MIM decoupling capacitor modules is proven to increase the maximum frequency of the processor by close to 10%. Simulations predict reduced power supply noise leading to improvements in Fmax by close to the equivalent of a transistor node increase. Simulations of applying MIM decoupling capacitors to high-speed I/O and PLL circuits show that they can further enhance performance and area requirements for these critical circuits in advanced technologies\",\"PeriodicalId\":166617,\"journal\":{\"name\":\"2006 IEEE International Solid State Circuits Conference - Digest of Technical Papers\",\"volume\":\"260 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-09-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"19\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2006 IEEE International Solid State Circuits Conference - Digest of Technical Papers\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISSCC.2006.1696280\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 IEEE International Solid State Circuits Conference - Digest of Technical Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSCC.2006.1696280","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 19

摘要

大量应用高k MIM去耦电容模块的90nm SOI微处理器被证明可以将处理器的最大频率提高近10%。模拟预测，电源噪声的降低将导致Fmax的改善，其效果接近于晶体管节点的增加。将MIM去耦电容器应用于高速I/O和锁相环电路的仿真表明，它们可以进一步提高先进技术中这些关键电路的性能和面积要求

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Increasing Microprocessor Speed by Massive Application of On-Die High-K MIM Decoupling Capacitors

A 90nm SOI microprocessor with massive application of high-k MIM decoupling capacitor modules is proven to increase the maximum frequency of the processor by close to 10%. Simulations predict reduced power supply noise leading to improvements in Fmax by close to the equivalent of a transistor node increase. Simulations of applying MIM decoupling capacitors to high-speed I/O and PLL circuits show that they can further enhance performance and area requirements for these critical circuits in advanced technologies

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2006 IEEE International Solid State Circuits Conference - Digest of Technical Papers

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