单片集成8:1 SOA门开关，增益偏差小，WDM信号输入功率动态范围大

2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2010-07-23 DOI:10.1109/ICIPRM.2010.5515990

Shinsuke Tanaka, Seok-Hwan Jeong, A. Uetake, S. Yamazaki, K. Morito

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引用次数: 0

摘要

我们为大规模高速交换系统开发了一种高度统一的单片集成8输入1输出(8:1)SOA门开关。低损耗8:1锥形MMI耦合器抑制了由内部干扰引起的增益波动。该器件的增益偏差非常小，仅为50 dB，导通状态增益>10 dB。我们还演示了在>9.8 dB的大输入功率动态范围下对8×10 Gb/s WDM信号的无罚分放大

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Monolithically-integrated 8:1 SOA gate switch with small gain deviation and large input power dynamic range for WDM signals

We developed a highly uniform monolithically integrated 8-input and 1-output (8:1) SOA gate switch for a large-scale high-speed switching system. The gain fluctuation due to an internal interference was suppressed with a low loss 8:1 tapered MMI coupler. The device exhibited a very small gain deviation of <2.0 dB for all wavelengths in the C-band, together with a high extinction ratio of >50 dB and an ON-state gain of >10 dB. We also demonstrated a penalty-free amplification of 8×10 Gb/s WDM signals with a large input power dynamic range of >9.8 dB

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2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)

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