SiC MOSFET并联模块电流分担方法研究

2018 IEEE International Conference on Electron Devices and Solid State Circuits (EDSSC) Pub Date : 2018-06-01 DOI:10.1109/EDSSC.2018.8487112

Chengwu Hui, Yuan Yang, Yafei Xue, Yang Wen

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引用次数: 6

摘要

本文分析了SiC mosfet并联的电流共享方法。提出了一种门阻与耦合电感组合补偿的新方法。在静态和动态条件下，对并联的SiC mosfet进行了电阻串联补偿、电感耦合补偿和门阻与电感耦合补偿的组合补偿。结果表明，采用门阻补偿与耦合电感相结合的电流分担方法，将电流不平衡从10.9%降低到1.47%。

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Research on Current Sharing Method of SiC MOSFET Parallel Modules

This work analyzes current sharing methods for SiC MOSFETs in parallel. A novel method of combination gate resistance compensation with coupling inductance is presented. The different methods including series resistance, coupled inductance and combination the gate resistance compensation with coupling inductance are simulated under static and dynamic conditions for SiC MOSFETs in parallel. The results show that the current imbalance is reduced from 10.9% to 1.47% by means of the current sharing method of combination the gate resistance compensation with coupling inductance.

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来源期刊

2018 IEEE International Conference on Electron Devices and Solid State Circuits (EDSSC)

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