二氧化硅中空穴阱的产生

Proceedings of the 2001 8th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2001 (Cat. No.01TH8548) Pub Date : 1900-01-01 DOI:10.1109/IPFA.2001.941453

J.F. Zhang, H. K. Sii, G. Groeseneken, R. Degraeve

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引用次数: 2

摘要

氧化物击穿是未来CMOS技术的潜在亮点。缺陷的产生是造成故障的原因。以前的工作(Degraeve et al.， 2000;Stathis and DiMaria, 1999;Zhang et al .， 1992)的研究重点是电子陷阱的产生，而空穴陷阱的产生信息较少。这篇论文明确地表明，大量的空穴陷阱是可以被创造出来的。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Generation of hole traps in silicon dioxides

Oxide breakdown is a potential showstopper for future CMOS technology. Defect generation is responsible for the breakdown. Previous work (Degraeve et al., 2000; Stathis and DiMaria, 1999; Zhang et al, 1992) was focused on electron trap generation, while little information is available on hole trap generation. This paper unambiguously shows that a significant amount of hole traps can be created.

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Proceedings of the 2001 8th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2001 (Cat. No.01TH8548)

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