使用IGZO通道和ZnO电荷阱层的透明和/或柔性存储薄膜晶体管的非易失性存储性能

So-jung Kim, W. Lee, Sung‐Min Yoon
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引用次数: 0

摘要

我们提出了一种透明和/或柔性电荷阱型记忆薄膜晶体管(CTM-TFTs),其顶栅结构由氧化锌(ZnO)电荷阱和In-Ga-Zn-O (IGZO)有源沟道层组成。当程序脉冲宽度和振幅分别为500 ns和±20 V时,在玻璃基板上制备的全透明ctm - tft的记忆通/关比高于7个数量级。对于宽为25.8 V的存储器窗口,成功地确认了非易失性存储器行为。此外,即使在可见光范围内使用不同波长的光照条件下,也保证了高度稳定的存储性能。在报告中还将讨论在聚乙烯萘二甲酸酯基板上制备的柔性ctm - tft的存储操作。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Nonvolatile memory performances of transparent and/or flexible memory thin-film transistors using IGZO channel and ZnO charge-trap layers
We proposed a transparent and/or flexible charge-trap-type memory thin film transistors (CTM-TFTs) with a top-gate structure composed of zinc-oxide (ZnO) charge-trap and In-Ga-Zn-O (IGZO) active channel layers. The memory on/off ratio higher than 7-orders-of magnitude was obtained for the fully transparent CTM-TFTs fabricated on glass substrates when the width and amplitude of program pulses were set as 500 ns and ±20 V, respectively. The nonvolatile memory behaviors was successfully confirmed for the memory window to be as wide as 25.8 V. Furthermore, the highly stable memory performance was also guaranteed even under the light illumination conditions using various wavelength in the visible range. The memory operations of the flexible CTM-TFTs prepared on plastic polyethylene naphthalate substrates will also be discussed at presentation.
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