纳米线阵列太阳能电池

S. Petrosyan, Varsenik Khachatryan, A. Yesayan
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摘要

对基于径向p-n结纳米线阵列的第三代光伏器件进行了理论研究。我们考虑p型垂直Si纳米线阵列在n型Si矩阵中有规则分布,NWs半径从纳米尺度到微米尺度不等。理论研究表明,与平面pn结相比,径向pn结的光伏电池具有一定的优势,因为收集少数载流子所需的距离减少了。描述了光电压、光电流、电池效率和开路电压对纳米线阵列参数的依赖关系。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Nanowire Array Solar Cells
The third-generation photovoltaic device based on nanowire (NW) array with radial p-n junctions is theoretically studied. We consider p-type vertical Si nanowire array regularly distributed in an n-type Si matrix with NWs radii varying from nano-scale to micro-scale. Theoretical investigations show that photovoltaic (PV) cell with radial p-n junction has some advantages compared to that with planar p-n junction as the distance required to collect minority carriers is decreased. The dependences of photovoltage, photocurrent, cell efficiency and open circuit voltage on nanowire array parameters are described.
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