{"title":"纳米线阵列太阳能电池","authors":"S. Petrosyan, Varsenik Khachatryan, A. Yesayan","doi":"10.1109/LAEDC54796.2022.9908230","DOIUrl":null,"url":null,"abstract":"The third-generation photovoltaic device based on nanowire (NW) array with radial p-n junctions is theoretically studied. We consider p-type vertical Si nanowire array regularly distributed in an n-type Si matrix with NWs radii varying from nano-scale to micro-scale. Theoretical investigations show that photovoltaic (PV) cell with radial p-n junction has some advantages compared to that with planar p-n junction as the distance required to collect minority carriers is decreased. The dependences of photovoltage, photocurrent, cell efficiency and open circuit voltage on nanowire array parameters are described.","PeriodicalId":276855,"journal":{"name":"2022 IEEE Latin American Electron Devices Conference (LAEDC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-07-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Nanowire Array Solar Cells\",\"authors\":\"S. Petrosyan, Varsenik Khachatryan, A. Yesayan\",\"doi\":\"10.1109/LAEDC54796.2022.9908230\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The third-generation photovoltaic device based on nanowire (NW) array with radial p-n junctions is theoretically studied. We consider p-type vertical Si nanowire array regularly distributed in an n-type Si matrix with NWs radii varying from nano-scale to micro-scale. Theoretical investigations show that photovoltaic (PV) cell with radial p-n junction has some advantages compared to that with planar p-n junction as the distance required to collect minority carriers is decreased. The dependences of photovoltage, photocurrent, cell efficiency and open circuit voltage on nanowire array parameters are described.\",\"PeriodicalId\":276855,\"journal\":{\"name\":\"2022 IEEE Latin American Electron Devices Conference (LAEDC)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-07-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 IEEE Latin American Electron Devices Conference (LAEDC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/LAEDC54796.2022.9908230\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 IEEE Latin American Electron Devices Conference (LAEDC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/LAEDC54796.2022.9908230","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The third-generation photovoltaic device based on nanowire (NW) array with radial p-n junctions is theoretically studied. We consider p-type vertical Si nanowire array regularly distributed in an n-type Si matrix with NWs radii varying from nano-scale to micro-scale. Theoretical investigations show that photovoltaic (PV) cell with radial p-n junction has some advantages compared to that with planar p-n junction as the distance required to collect minority carriers is decreased. The dependences of photovoltage, photocurrent, cell efficiency and open circuit voltage on nanowire array parameters are described.