温度和掺杂参数对分段阳极NPN (SA-NPN) light性能的影响

2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs Pub Date : 2004-05-24 DOI:10.1109/WCT.2004.239989

D. Green, S. Hardikar, M. Sweet, K. Vershinin, R. Tadikonda, M. M. De Souza, E. Narayanan

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引用次数: 11

摘要

提出了一种超高性能的SA-NPN阳极light。与其他结构相比，SA-NPN通过简单改变NPN/P+宽度的比例，在设计阶段提供了器件特性的可控性。在室温和高温下，与传统结构相比，SA-NPN light的性能优势清楚地表明，SA-NPN是横向功率器件阳极工程中最好的产品之一。

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Influence of temperature and doping parameters on the performance of segmented anode NPN (SA-NPN) LIGBT

An ultra-high performance SA-NPN anode LIGBT is presented. In contrast to other structures, the SA-NPN offers controllability of the device characteristics at the design stage through a simple variation in the ratio of NPN/P+ widths. The performance advantages of the SA-NPN LIGBT in comparison to a conventional structure at both room and elevated temperatures clearly demonstrate that the SA-NPN is one of the best in the class of anode engineering for lateral power devices.

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2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs

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