{"title":"局域态波动控制的载流子输运和复合","authors":"V. Arkhipov, G. Adriaenssens","doi":"10.1109/ISE.1996.578035","DOIUrl":null,"url":null,"abstract":"A model is presented which explains apparent temperature dependences of the density of state distributions in amorphous semiconductors and dielectrics. The model takes into account temporal fluctuations of the localized-state energies and predicts distributions of activation energies with sharp edges whose positions are temperature dependent. Effect of the fluctuations on charge carrier transport is discussed.","PeriodicalId":425004,"journal":{"name":"9th International Symposium on Electrets (ISE 9) Proceedings","volume":"49 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Charge carrier transport and recombination controlled by fluctuating localized states\",\"authors\":\"V. Arkhipov, G. Adriaenssens\",\"doi\":\"10.1109/ISE.1996.578035\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A model is presented which explains apparent temperature dependences of the density of state distributions in amorphous semiconductors and dielectrics. The model takes into account temporal fluctuations of the localized-state energies and predicts distributions of activation energies with sharp edges whose positions are temperature dependent. Effect of the fluctuations on charge carrier transport is discussed.\",\"PeriodicalId\":425004,\"journal\":{\"name\":\"9th International Symposium on Electrets (ISE 9) Proceedings\",\"volume\":\"49 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-09-25\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"9th International Symposium on Electrets (ISE 9) Proceedings\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISE.1996.578035\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"9th International Symposium on Electrets (ISE 9) Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISE.1996.578035","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Charge carrier transport and recombination controlled by fluctuating localized states
A model is presented which explains apparent temperature dependences of the density of state distributions in amorphous semiconductors and dielectrics. The model takes into account temporal fluctuations of the localized-state energies and predicts distributions of activation energies with sharp edges whose positions are temperature dependent. Effect of the fluctuations on charge carrier transport is discussed.
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