基于双vdd平台fpga的寿命可靠性感知设计流程技术

P. Mangalagiri, N. Vijaykrishnan
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引用次数: 3

摘要

随着芯片上功率密度的不断增加和技术的不断扩展,双电源电压的低功耗FPGA结构应运而生。这种低功耗技术与FPGA上组件的异质性相结合,由于温度和电压相关的失效机制,导致组件的不均匀老化。在本文中,我们提出了在设计流程的放置和路由阶段的技术,这些技术将通过确保均匀老化来增加组件的平均寿命。我们首先研究了温度和电压变化对元件寿命可靠性的影响。在存在这些变化的情况下,我们研究了由于电迁移(EM)和由于时间相关介电击穿(TDDB)导致的双电击穿对FPGA互连老化的影响。在我们的设计流程优化中,我们还考虑了由于热载流子不稳定性(HCI)而导致的性能下降。所提出的可靠性感知设计流程技术分别使lut和互连线的寿命平均提高了65.8%和75%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Lifetime Reliability Aware Design Flow Techniques for Dual-Vdd Based Platform FPGAs
Increasing on-chip power densities with aggressive technology scaling has led to a low-power FPGA fabric with dual supply voltages. Such low-power techniques coupled with the heterogeneity of components on a FPGA have led to non-uniform aging of components due to temperature and voltage dependent failure mechanisms. In this paper, we present techniques in placement and routing stages of the design flow that will increase the average life-time of components by ensuring uniform aging. We first study the impact of temperature and voltage variations on lifetime reliability of components. In the presence of such variations, we study the impact of aging in FPGA interconnects due to Electromigration (EM), and di-electric breakdown due to Time Dependent Dielectric Breakdown (TDDB). We also consider the performance degradation due to Hot Carrier Instability (HCI) in our design flow optimizations.The proposed reliability aware design flow techniques achieve anaverage of 65.8% and 75% improvement in lifetime of LUTs and interconnect wires respectively.
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