基于45nm SOI CMOS的50gb /s低延迟多芯片模块光I/O NRZ接收器

Yihong Li, Sikai Chen, Yunqi Yang, Qianli Ma, Ming Zhong, Ziyi Lin, Leliang Li, Guike Li, Zhao Zhang, Liyuan Liu, Jian Liu, N. Wu, Yong Chen, Qi Peng, Nan Qi
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引用次数: 1

摘要

本文提出了一种50gb /s的光接收器芯片组,采用45纳米的SOI(硅绝缘体)CMOS技术。它包括一个跨阻抗放大器(TIA),由时钟和数据恢复电路(CDR)级联。基于逆变器的混合峰值电感拓扑结构旨在提高TIA带宽(BW)。为了实现多通道集成和低功耗,提出了一种基于相位插值器的波特率采样鉴相器数字话单。测量结果表明,TIA实现了53-dBΩ增益和S21的27 ghz BW。接收器原型输出3.125 ghz恢复时钟,相位噪声为- 125.84 dbc /Hz@10MHz,反串行数据为6.25 gb /s, RMS抖动为3.5 ps。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A 50-Gb/s NRZ Receiver Targeting Low-Latency Multi-Chip Module Optical I/O in 45-nm SOI CMOS
This paper presents a 50-Gb/s optical receiver chipset in 45-nm silicon-on-insulator (SOI) CMOS. It comprises a trans-impedance amplifier (TIA) cascaded by a clock and data recovery circuits (CDR). Inverter-based topology with hybrid-peaking inductors is designed to improve the TIA bandwidth (BW). Phase-interpolator-based digital CDR with a baud-rate sampling phase detector is developed for multi-channel integration and low power consumption. Measurements show that the TIA achieves a 53-dBΩ gain and a 27-GHz BW of S21. The receiver prototype outputs a 3.125-GHz recovered clock with −125.84-dBc/Hz@10MHz phase noise and 6.25-Gb/s deserialized data with a 3.5-ps RMS jitter.
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