一种用于低至宽电压范围应用的新型超深亚微米电平移位器

IEEE International SOC Conference, 2004. Proceedings. Pub Date : 2004-11-30 DOI:10.1109/SOCC.2004.1362388

Kyounghoi Koo, Jin-Ho Seo, Myeonglyong Ko, Jae-Whui Kim

{"title":"一种用于低至宽电压范围应用的新型超深亚微米电平移位器","authors":"Kyounghoi Koo, Jin-Ho Seo, Myeonglyong Ko, Jae-Whui Kim","doi":"10.1109/SOCC.2004.1362388","DOIUrl":null,"url":null,"abstract":"A level shifter aimed at ultra low core voltage and wide range I/O voltage is designed using a 90nm CMOS process. Proposed level shifter uses analog circuit techniques and zero-Vt transistor with no extra process step, no static power and stable duty ratio make this level shifter suitable for ultra low core voltage and wide range I/O voltage applications. These techniques work even 0.6V core voltage, 1.65-3.6V I/O voltage within 45:55 duty ratio up to 200MHz.","PeriodicalId":184894,"journal":{"name":"IEEE International SOC Conference, 2004. Proceedings.","volume":"5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-11-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":"{\"title\":\"A new level shifter in ultra deep sub-micron for low to wide range voltage applications\",\"authors\":\"Kyounghoi Koo, Jin-Ho Seo, Myeonglyong Ko, Jae-Whui Kim\",\"doi\":\"10.1109/SOCC.2004.1362388\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A level shifter aimed at ultra low core voltage and wide range I/O voltage is designed using a 90nm CMOS process. Proposed level shifter uses analog circuit techniques and zero-Vt transistor with no extra process step, no static power and stable duty ratio make this level shifter suitable for ultra low core voltage and wide range I/O voltage applications. These techniques work even 0.6V core voltage, 1.65-3.6V I/O voltage within 45:55 duty ratio up to 200MHz.\",\"PeriodicalId\":184894,\"journal\":{\"name\":\"IEEE International SOC Conference, 2004. Proceedings.\",\"volume\":\"5 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-11-30\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"12\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE International SOC Conference, 2004. Proceedings.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SOCC.2004.1362388\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE International SOC Conference, 2004. Proceedings.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOCC.2004.1362388","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 12

摘要

采用90nm CMOS工艺设计了一种以超低核心电压和宽范围I/O电压为目标的电平移位器。本文提出的电平转换器采用模拟电路技术和零vt晶体管，无额外的过程步骤，无静态功率和稳定的占空比，使该电平转换器适用于超低核心电压和大范围I/O电压应用。这些技术工作在0.6V核心电压，1.65-3.6V I/O电压在45:55占空比高达200MHz。

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A new level shifter in ultra deep sub-micron for low to wide range voltage applications

A level shifter aimed at ultra low core voltage and wide range I/O voltage is designed using a 90nm CMOS process. Proposed level shifter uses analog circuit techniques and zero-Vt transistor with no extra process step, no static power and stable duty ratio make this level shifter suitable for ultra low core voltage and wide range I/O voltage applications. These techniques work even 0.6V core voltage, 1.65-3.6V I/O voltage within 45:55 duty ratio up to 200MHz.

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IEEE International SOC Conference, 2004. Proceedings.

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