130nm SiGe BiCMOS技术的低功耗三环反馈宽带LNA

2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2018-10-01 DOI:10.1109/BCICTS.2018.8550893

Badou Sene, V. Issakov

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引用次数: 3

摘要

本文提出了一种超低功耗、超低噪声的超宽带放大器。我们提出了一种新颖的电路级技术，使用三重反馈回路同时优化增益，带宽和阻抗匹配，而不会增加直流功耗。该电路采用130 nm硅锗(SiGe)双极CMOS (BiCMOS)技术制造。LNA的峰值增益为9.3 dB，最小噪声系数为4.6 dB，输入压缩点(IP1dB)高于−9.9 dBm。它使用单个1.5 V电源电压仅消耗5.4 mW，同时在14至58 GHz的带宽上工作，占用$\mathbf{0.6}\ mathbf{0.48}\ \mathbf{mm}^{2}$的面积(包括焊盘)。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A Low-Power Triple-Loop Feedback Broadband LNA in a 130 nm SiGe BiCMOS Technology

In this paper a low-power Low Noise Amplifier (LNA) with ultra broad bandwidth is presented. We propose a novel circuit-level technique using a triple feedback loop to optimize simultaneously gain, bandwidth and impedance matching without the penalty of added DC power dissipation. The circuit has been fabricated using a 130 nm silicon-germanium (SiGe) bipolar CMOS (BiCMOS) technology. The LNA has a peak gain of 9.3 dB, a minimum noise figure of 4.6 dB and an input compression point (IP1dB) higher than −9.9 dBm. It consumes only 5.4 mW using a single 1.5 V supply voltage, while working over a bandwidth from 14 to 58 GHz and occupying an area of $\mathbf{0.6}\times \mathbf{0.48}\ \mathbf{mm}^{2}$ including pads.

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2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)

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