比较高迁移率InGaAs fet与Si和GOI器件

2006 64th Device Research Conference Pub Date : 2006-06-26 DOI:10.1109/DRC.2006.305130

C. Liao, H. Kao, A. Chin, D. Yu, M. Li, C. Zhu, S. Mcalister

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引用次数: 7

摘要

我们展示了在硅衬底上无位错的InAlAs/InGaAs/InAlAs-on- insulator (IIIVOI) HEMT，它具有高漏极电流和8,100 cm2/Vs迁移率。为了减小器件中的肖特基栅漏电流，采用了高Al2O3/InGaAs栅极堆叠。在相同的等效氧化层厚度(EOT)下，该结构的栅极漏电流比SiO2/Si MOSFET低，有效迁移率提高了2.5倍。

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Comparing High Mobility InGaAs FETs with Si and GOI Devices

We demonstrate a dislocation-free InAlAs/InGaAs/InAlAs-on-Insulator (IIIVOI) HEMT on a Si substrate, which has a high drain current and 8,100 cm2/Vs mobility. To reduce the Schottky gate leakage current in the device, a high-¿ Al2O3/InGaAs gate stack was used. By using this structure the gate leakage current was lower than that for a SiO2/Si MOSFET at the same equivalent-oxide-thickness (EOT), and the measured 451 cm2/Vs effective mobility was 2.5X higher.

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2006 64th Device Research Conference

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