分子束外延生长高压缩应变锗锡(GeSn)的热稳定性

2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM) Pub Date : 2014-06-02 DOI:10.1109/ISTDM.2014.6874668

Wei Wang, Qian Zhou, Jisheng Pan, Zheng Zhang, E. Tok, Y. Yeo

{"title":"分子束外延生长高压缩应变锗锡(GeSn)的热稳定性","authors":"Wei Wang, Qian Zhou, Jisheng Pan, Zheng Zhang, E. Tok, Y. Yeo","doi":"10.1109/ISTDM.2014.6874668","DOIUrl":null,"url":null,"abstract":"Highly strained Ge1-xSnx films were epitaxially grown on Ge(001), with x up to 0.17. Good crystalline quality and a relatively flat surface were obtained. Critical temperatures exist for Sn segregation for various x. XPS shows that the Sn surface segregation could occur at temperatures as low as 400 °C for Ge0.932Sn0.068.","PeriodicalId":371483,"journal":{"name":"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)","volume":"83 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Thermal stability of highly compressive strained germanium-tin (GeSn) grown by molecular beam epitaxy\",\"authors\":\"Wei Wang, Qian Zhou, Jisheng Pan, Zheng Zhang, E. Tok, Y. Yeo\",\"doi\":\"10.1109/ISTDM.2014.6874668\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Highly strained Ge1-xSnx films were epitaxially grown on Ge(001), with x up to 0.17. Good crystalline quality and a relatively flat surface were obtained. Critical temperatures exist for Sn segregation for various x. XPS shows that the Sn surface segregation could occur at temperatures as low as 400 °C for Ge0.932Sn0.068.\",\"PeriodicalId\":371483,\"journal\":{\"name\":\"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)\",\"volume\":\"83 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-06-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISTDM.2014.6874668\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISTDM.2014.6874668","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

在Ge(001)上外延生长出高应变的Ge1-xSnx薄膜，x高达0.17。获得了良好的结晶质量和相对平坦的表面。对于不同的x，存在着锡偏析的临界温度。XPS表明，ge0.932和sn0.068的表面锡偏析温度低至400℃。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Thermal stability of highly compressive strained germanium-tin (GeSn) grown by molecular beam epitaxy

Highly strained Ge_1-xSn_x films were epitaxially grown on Ge(001), with x up to 0.17. Good crystalline quality and a relatively flat surface were obtained. Critical temperatures exist for Sn segregation for various x. XPS shows that the Sn surface segregation could occur at temperatures as low as 400 °C for Ge_0.932Sn_0.068.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)

自引率

0.00%

发文量