{"title":"碳纳米管场效应晶体管的交直流特性","authors":"J. Appenzeller","doi":"10.1109/BIPOL.2004.1365777","DOIUrl":null,"url":null,"abstract":"Recent results on the DC as well as AC characteristics of carbon nanotube field-effect transistors (CN-FETs) are presented. Experimental data is discussed in the context of an extended Schottky barrier model and the potential of CNFETs for high frequency applications is elucidated.","PeriodicalId":447762,"journal":{"name":"Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting","volume":"38 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-12-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"AC and DC characteristics of carbon nanotube field-effect transistors\",\"authors\":\"J. Appenzeller\",\"doi\":\"10.1109/BIPOL.2004.1365777\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Recent results on the DC as well as AC characteristics of carbon nanotube field-effect transistors (CN-FETs) are presented. Experimental data is discussed in the context of an extended Schottky barrier model and the potential of CNFETs for high frequency applications is elucidated.\",\"PeriodicalId\":447762,\"journal\":{\"name\":\"Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting\",\"volume\":\"38 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-12-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/BIPOL.2004.1365777\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BIPOL.2004.1365777","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
AC and DC characteristics of carbon nanotube field-effect transistors
Recent results on the DC as well as AC characteristics of carbon nanotube field-effect transistors (CN-FETs) are presented. Experimental data is discussed in the context of an extended Schottky barrier model and the potential of CNFETs for high frequency applications is elucidated.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
