J. Hooker, N. Pérez, P. Alén, M. Ritala, M. Leskela, F. Roozeboom, J.G.M. van Berkurn, E. Naburgh, F.C. van den Heuvel, J. Maes
{"title":"热ALD Ta(Si)N栅极在HfO/sub / [CMOS器件应用]上的功函数稳定性","authors":"J. Hooker, N. Pérez, P. Alén, M. Ritala, M. Leskela, F. Roozeboom, J.G.M. van Berkurn, E. Naburgh, F.C. van den Heuvel, J. Maes","doi":"10.1109/ESSDER.2004.1356494","DOIUrl":null,"url":null,"abstract":"Ta(Si)N films deposited by thermal atomic layer deposition (ALD) have been investigated as potential gate electrode materials in advanced CMOS devices. The work function (/spl Phi//sub m/) of these films was determined by high-frequency capacitance-voltage measurements (HF-CV) on a thickness series of ALD HfO/sub 2/. Depositing films at 400 and 500/spl deg/C with an optimized pulse sequence, two films with Si content of 3 and 8 at%, respectively, were studied. Both Ta(Si)N films gave /spl Phi//sub m/ of 4.7/spl plusmn/0.1 eV, also, after high-temperature thermal treatment, with the 400/spl deg/C deposition giving more reliable electrical performance.","PeriodicalId":287103,"journal":{"name":"Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat. No.04EX850)","volume":"131 3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-11-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Work function stability of thermal ALD Ta(Si)N gate electrodes on HfO/sub 2/ [CMOS device applications]\",\"authors\":\"J. Hooker, N. Pérez, P. Alén, M. Ritala, M. Leskela, F. Roozeboom, J.G.M. van Berkurn, E. Naburgh, F.C. van den Heuvel, J. Maes\",\"doi\":\"10.1109/ESSDER.2004.1356494\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Ta(Si)N films deposited by thermal atomic layer deposition (ALD) have been investigated as potential gate electrode materials in advanced CMOS devices. The work function (/spl Phi//sub m/) of these films was determined by high-frequency capacitance-voltage measurements (HF-CV) on a thickness series of ALD HfO/sub 2/. Depositing films at 400 and 500/spl deg/C with an optimized pulse sequence, two films with Si content of 3 and 8 at%, respectively, were studied. Both Ta(Si)N films gave /spl Phi//sub m/ of 4.7/spl plusmn/0.1 eV, also, after high-temperature thermal treatment, with the 400/spl deg/C deposition giving more reliable electrical performance.\",\"PeriodicalId\":287103,\"journal\":{\"name\":\"Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat. No.04EX850)\",\"volume\":\"131 3 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-11-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat. No.04EX850)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ESSDER.2004.1356494\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat. No.04EX850)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSDER.2004.1356494","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Work function stability of thermal ALD Ta(Si)N gate electrodes on HfO/sub 2/ [CMOS device applications]
Ta(Si)N films deposited by thermal atomic layer deposition (ALD) have been investigated as potential gate electrode materials in advanced CMOS devices. The work function (/spl Phi//sub m/) of these films was determined by high-frequency capacitance-voltage measurements (HF-CV) on a thickness series of ALD HfO/sub 2/. Depositing films at 400 and 500/spl deg/C with an optimized pulse sequence, two films with Si content of 3 and 8 at%, respectively, were studied. Both Ta(Si)N films gave /spl Phi//sub m/ of 4.7/spl plusmn/0.1 eV, also, after high-temperature thermal treatment, with the 400/spl deg/C deposition giving more reliable electrical performance.