采用0.15μm和0.25μm GaN hemt的5G功率放大器设计解决方案

2020 International Symposium on VLSI Design, Automation and Test (VLSI-DAT) Pub Date : 2020-08-01 DOI:10.1109/VLSI-DAT49148.2020.9196306

Yi-Qi Lin, A. Patterson

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引用次数: 2

摘要

本文介绍了基于GaN SiC HEMT技术的5G功率放大器解决方案。讨论了$0.15 \mu \mathrm{m}$和$0.25 \mu \mathrm{m}$ GaN HEMT器件的性能差异。测量结果显示，$0.25 \mu \ mathm {m}$ GaN hemt为高达18 GHz的应用提供了良好的性能，包括在Sub-6 GHz 5G频段的出色性能。GaN hemt目前在32 GHz以上的应用中提供了良好的性能，包括在24-28 GHz 5G毫米波频段的优异性能。还在开发0.15 \mu \math {m}$工艺的变化，以扩展工作频率，以覆盖39 GHz的美国5G毫米波频段，并将40 GHz以上的工作频率包括Q波段卫星。本文讨论了一种分立GaN功率晶体管(电源条)DC - 14GHz的性能，在单级晶体管中具有高功率密度和PAE，可提供适用于sub - 6ghz 5G的强大性能。它还讨论了适合毫米波5G的2级5W PA MMIC 24- 28ghz的性能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Design Solutions for 5G Power Amplifiers using 0.15μm and 0.25μm GaN HEMTs

This paper presents Power Amplifier solutions for 5G using GaN SiC HEMT technology. The difference in performance between $0.15 \mu \mathrm{m}$ and $0.25 \mu \mathrm{m}$ GaN HEMT devices is discussed. Measurements show $0.25 \mu \mathrm{m}$ GaN HEMTs provide good performance for applications up to 18 GHz, including excellent performance in the Sub-6 GHz 5G bands. $0.15 \mu \mathrm{m}$ GaN HEMTs currently offer good performance for applications to more than 32 GHz, including excellent performance in the 24-28 GHz 5G mm-wave band. Variations on the $0.15 \mu \mathrm{m}$ process are also being developed to extend the operation frequency to cover the US 5G mm-wave band at 39 GHz and operation over 40 GHz to include Q band Satellite. This paper discusses performance of a discrete GaN power transistor (power bar) DC - 14GHz, with high power density and PAE in a single stage transistor that offers strong performance suitable for Sub-6 GHz 5G. It also discusses performance of a 2-stage 5W PA MMIC 24-28 GHz which is ideally suited for mm-wave 5G.

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2020 International Symposium on VLSI Design, Automation and Test (VLSI-DAT)

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