未来几代MOSFET的电路仿真模型

2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502) Pub Date : 2000-09-06 DOI:10.1109/SISPAD.2000.871219

M. Miura-Mattausch, H. Ueno, H. Mattausch, S. Kumashiro, Tetsuya Yamaguchi, K. Yamashita, N. Nakayama

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引用次数: 2

摘要

MOSFET建模电路仿真的紧迫任务是易于适应先进技术产生的新物理现象，当然，还有足够的仿真精度。总结了目前用于开发这种MOSFET模型的方法。讨论了它们完成这些任务的能力以及遗留下来的重要问题。

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Circuit simulation models for coming MOSFET generations

The urgent tasks of MOSFET modeling for circuit simulation are easy adaptation to new physical phenomena arising for advancing technologies, and, of course, sufficient simulation accuracy. Approaches currently being pursued for developing such MOSFET models are summarized. Their capabilities for accomplishing these tasks as well as the important remaining problems are discussed.

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2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502)

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