N. Ibaraki, T. Shimano, K. Fukuda, K. Matsumura, K. Suzuki, H. Toeda, O. Takikawa
{"title":"一种用于10.4英寸lcd的具有SiO2/SiN/sub x/栅极绝缘体的新型A - si TFT","authors":"N. Ibaraki, T. Shimano, K. Fukuda, K. Matsumura, K. Suzuki, H. Toeda, O. Takikawa","doi":"10.1109/DISPL.1991.167485","DOIUrl":null,"url":null,"abstract":"A novel a-Si TFT (thin-film transistor) with a composite gate insulator of CVD (chemical-vapor-deposited) SiO/sub 2//PE-CVD (plasma-enhanced CVD) SiN/sub x/ has been developed. This TFT has been applied to 10.4-in-diagonal LCDs (liquid crystal displays). Because of the high quality of CVD SiO/sub 2/, Vth drift, which was often observed after prolonged application of gate bias, was remarkably reduced compared to PE-CVD SiO/sub x/N/sub y/. Also, the degradation of subthreshold characteristics on a-Si TFT (often observed after long-term operation of LCDs at high temperature) was improved. Selective etching technologies of SiN/sub x/ against SiO/sub 2/, which is one of key issues in connection with obtaining high production yield, have been developed.<<ETX>>","PeriodicalId":399708,"journal":{"name":"Conference Record of the 1991 International Display Research Conference","volume":"31 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1991-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"A new a-Si TFT with SiO2/SiN/sub x/ gate insulator for 10.4-inch LCDs\",\"authors\":\"N. Ibaraki, T. Shimano, K. Fukuda, K. Matsumura, K. Suzuki, H. Toeda, O. Takikawa\",\"doi\":\"10.1109/DISPL.1991.167485\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A novel a-Si TFT (thin-film transistor) with a composite gate insulator of CVD (chemical-vapor-deposited) SiO/sub 2//PE-CVD (plasma-enhanced CVD) SiN/sub x/ has been developed. This TFT has been applied to 10.4-in-diagonal LCDs (liquid crystal displays). Because of the high quality of CVD SiO/sub 2/, Vth drift, which was often observed after prolonged application of gate bias, was remarkably reduced compared to PE-CVD SiO/sub x/N/sub y/. Also, the degradation of subthreshold characteristics on a-Si TFT (often observed after long-term operation of LCDs at high temperature) was improved. Selective etching technologies of SiN/sub x/ against SiO/sub 2/, which is one of key issues in connection with obtaining high production yield, have been developed.<<ETX>>\",\"PeriodicalId\":399708,\"journal\":{\"name\":\"Conference Record of the 1991 International Display Research Conference\",\"volume\":\"31 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1991-10-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Conference Record of the 1991 International Display Research Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DISPL.1991.167485\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Record of the 1991 International Display Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DISPL.1991.167485","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A new a-Si TFT with SiO2/SiN/sub x/ gate insulator for 10.4-inch LCDs
A novel a-Si TFT (thin-film transistor) with a composite gate insulator of CVD (chemical-vapor-deposited) SiO/sub 2//PE-CVD (plasma-enhanced CVD) SiN/sub x/ has been developed. This TFT has been applied to 10.4-in-diagonal LCDs (liquid crystal displays). Because of the high quality of CVD SiO/sub 2/, Vth drift, which was often observed after prolonged application of gate bias, was remarkably reduced compared to PE-CVD SiO/sub x/N/sub y/. Also, the degradation of subthreshold characteristics on a-Si TFT (often observed after long-term operation of LCDs at high temperature) was improved. Selective etching technologies of SiN/sub x/ against SiO/sub 2/, which is one of key issues in connection with obtaining high production yield, have been developed.<>
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