基于单门可重构场效应晶体管的可重构电路

2020 IEEE International Conference on Electronics, Computing and Communication Technologies (CONECCT) Pub Date : 2020-07-01 DOI:10.1109/CONECCT50063.2020.9198322

R. Jayachandran, R. Komaragiri, P. C. Subramaniam

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引用次数: 2

摘要

介绍了一种单栅极可重构场效应晶体管(SG-RFET)的可重构电路的设计与仿真。sg - FET的器件特性与栅极长度相同的硅栅极全能FET (GAAFET)进行了基准测试。在Sentaurus technology计算机辅助设计(TCAD)工具中，对采用SG-RFET器件的可重构电路——逆变器、电流镜、环形振荡器进行了仿真验证。与现有晶体管相比，简单的设计，低路径延迟和降低的路由复杂性使SG-RFET成为潜在的候选者。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Reconfigurable circuits based on Single Gate Reconfigurable Field-Effect Transistors

Design and simulation of reconfigurable circuits using a single gate reconfigurable field-effect transistor (SG-RFET) are presented. The device characteristics of SG-RFET is benchmarked against the silicon gate-all-around FET (GAAFET) with same gate length. Reconfigurable circuits- inverter, current mirror, ring oscillator using SG-RFET device are validated with simulation results in Sentaurus technology computer-aided design (TCAD) tool. Simple design, low path delay and reduced routing complexity make SG-RFET a potential candidate compared to the existing transistors.

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来源期刊

2020 IEEE International Conference on Electronics, Computing and Communication Technologies (CONECCT)

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