超高功率发光二极管电镀封装新技术

Y. K. Su, K. C. Chen, C. L. Lin, R. Chuang, J. Q. Huang, H. Hsu
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引用次数: 1

摘要

器件封装的热管理是目前大功率发光二极管应用中的一个关键问题。本文首次将铜直接电镀在新型封装的红、绿、蓝LED芯片上。有了镀铜层,这些LED芯片在室温下的持久注入电流可以很容易地从传统的350 mA增加到1680 mA以上;特别是基于氮化镓的单片蓝光LED的输入功率可提高到12W。与传统封装led相比,新型红、绿、蓝led (RGB led)在350 mA时的相对发光强度分别提高了53%、69%和23%。当注入电流增加到850mA时,新型RGB LED芯片的相对发光强度与常规封装相比分别提高了431%、83%和18%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Novel Package Technology of Ultra High Power Light-Emitting Diodes by Electroplating
Thermal management of devices package is now a critical problem for applications of high power light emitting diodes (LEDs). In this paper coppers were first electroplated on the novel package red, green, and blue LED chips directly. With the copper plating layer, the endurable injection current of these LED chips can be increased easily from conventional 350 mA to more than 1680 mA in room temperature; especially the input power of the GaN-based single chip blue LED can be increased to 12W. The relative luminous intensity at 350 mA of the novel red, green, and blue LEDs (RGB LEDs) have 53%, 69%, and 23% enhancement respectively compared with those of the conventional packaged LEDs. When the injection current of these LED chips were increased to 850mA , the relative luminous intensity of the novel RGB LEDs chips have 431% and 83%, and 18% enhancement respectively compared with those of the conventional packaged ones.
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