{"title":"多色薄膜发射器","authors":"L. Hale, B. García, R. D. Ketchpel, T. C. Lim","doi":"10.1109/IEDM.1980.189937","DOIUrl":null,"url":null,"abstract":"There is an increasing demand for multi-color flat panel matrix displays. Recent work (1) has shown that thin film electroluminescent devices fabricated from ZnS doped with manganese, sandwiched between two dielectric layers, are capable of high brightness and long life. These devices exhibit many of the characteristics required for flat matrix panels. Using the same structure as above, a green emitting film has been developed which used TbF3as the activator. The brightness of this film is 700 fl which is three times brighter and requires significantly lower drive voltage than previously reported (2). Data will be presented indicating the results of annealing at different temperatures in order to optimize the light output. Electro-optic data indicates that the tunnel field emission model previously reported for Mn activated ZnS films is valid for the TbF3activated ZnS films. Spectroscopic data will be given on other rare earth activated films.","PeriodicalId":180541,"journal":{"name":"1980 International Electron Devices Meeting","volume":"33 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Multi-color thin film emitters\",\"authors\":\"L. Hale, B. García, R. D. Ketchpel, T. C. Lim\",\"doi\":\"10.1109/IEDM.1980.189937\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"There is an increasing demand for multi-color flat panel matrix displays. Recent work (1) has shown that thin film electroluminescent devices fabricated from ZnS doped with manganese, sandwiched between two dielectric layers, are capable of high brightness and long life. These devices exhibit many of the characteristics required for flat matrix panels. Using the same structure as above, a green emitting film has been developed which used TbF3as the activator. The brightness of this film is 700 fl which is three times brighter and requires significantly lower drive voltage than previously reported (2). Data will be presented indicating the results of annealing at different temperatures in order to optimize the light output. Electro-optic data indicates that the tunnel field emission model previously reported for Mn activated ZnS films is valid for the TbF3activated ZnS films. Spectroscopic data will be given on other rare earth activated films.\",\"PeriodicalId\":180541,\"journal\":{\"name\":\"1980 International Electron Devices Meeting\",\"volume\":\"33 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1980 International Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.1980.189937\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1980 International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.1980.189937","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
There is an increasing demand for multi-color flat panel matrix displays. Recent work (1) has shown that thin film electroluminescent devices fabricated from ZnS doped with manganese, sandwiched between two dielectric layers, are capable of high brightness and long life. These devices exhibit many of the characteristics required for flat matrix panels. Using the same structure as above, a green emitting film has been developed which used TbF3as the activator. The brightness of this film is 700 fl which is three times brighter and requires significantly lower drive voltage than previously reported (2). Data will be presented indicating the results of annealing at different temperatures in order to optimize the light output. Electro-optic data indicates that the tunnel field emission model previously reported for Mn activated ZnS films is valid for the TbF3activated ZnS films. Spectroscopic data will be given on other rare earth activated films.